JPH0257701B2 - - Google Patents

Info

Publication number
JPH0257701B2
JPH0257701B2 JP61254060A JP25406086A JPH0257701B2 JP H0257701 B2 JPH0257701 B2 JP H0257701B2 JP 61254060 A JP61254060 A JP 61254060A JP 25406086 A JP25406086 A JP 25406086A JP H0257701 B2 JPH0257701 B2 JP H0257701B2
Authority
JP
Japan
Prior art keywords
etching
film
polycrystalline silicon
electrode
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61254060A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6297332A (ja
Inventor
Atsushi Ueno
Shigero Kuninobu
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP25406086A priority Critical patent/JPS6297332A/ja
Publication of JPS6297332A publication Critical patent/JPS6297332A/ja
Publication of JPH0257701B2 publication Critical patent/JPH0257701B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP25406086A 1986-10-24 1986-10-24 Ｍｏｓトランジスタの製造方法 Granted JPS6297332A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25406086A JPS6297332A (ja) 1986-10-24 1986-10-24 Ｍｏｓトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25406086A JPS6297332A (ja) 1986-10-24 1986-10-24 Ｍｏｓトランジスタの製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP16577478A Division JPS5591130A (en) 1978-12-27 1978-12-27 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS6297332A JPS6297332A (ja) 1987-05-06
JPH0257701B2 true JPH0257701B2 (en]) 1990-12-05

Family

ID=17259667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25406086A Granted JPS6297332A (ja) 1986-10-24 1986-10-24 Ｍｏｓトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6297332A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910008983B1 (ko) * 1988-12-20 1991-10-26 현대전자산업 주식회사 비등방성 식각을 이용한 잔유물 제거방법
JP2580485Y2 (ja) * 1991-12-12 1998-09-10 住友電装株式会社 ブレーキライニング材の摩耗検知用プローブ
JP2586563Y2 (ja) * 1993-02-08 1998-12-09 住友電装株式会社 ブレーキライニング材の摩耗検知用プローブ
JP3227928B2 (ja) * 1993-08-06 2001-11-12 住友電装株式会社 パットウェアインジケータ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240978A (en) * 1975-09-27 1977-03-30 Fujitsu Ltd Process for production of semiconductor device
JPS5269583A (en) * 1975-12-08 1977-06-09 Hitachi Ltd Manufacture of insulation gate type semiconductor device
JPS5324277A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor devic e and its production
JPS5352384A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Electrode formation method

Also Published As

Publication number Publication date
JPS6297332A (ja) 1987-05-06

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